As3 H5 O10
semiconductorAs₃H₅O₁₀ is an arsenic-based oxyhydride compound classified as a semiconductor, likely representing an experimental or research-phase material rather than an established commercial product. This compound belongs to the family of arsenic oxides and hydroxides, which have been investigated for potential applications in optoelectronics and solid-state devices due to their semiconducting properties. The material's viability and performance characteristics remain primarily within research contexts, and practical engineering adoption would depend on demonstrating advantages over conventional semiconductors in specific applications and resolving any toxicity or stability concerns associated with arsenic-containing materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |