As₂Te₃ is a layered chalcogenide semiconductor compound composed of arsenic and tellurium, belonging to the V-VI semiconductor family. It is primarily investigated in research and emerging applications rather than established industrial production, valued for its narrow bandgap, strong light absorption, and thermoelectric properties. The material shows promise in infrared optoelectronics, phase-change memory devices, and thermoelectric generators, where its anisotropic crystal structure and sensitivity to thermal and optical stimuli offer advantages over conventional semiconductors in specialized niches.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.760 | eV | — |