As₂Se₃ is a binary chalcogenide semiconductor compound belonging to the group of layered materials with a layered crystal structure similar to black phosphorus and transition metal dichalcogenides. It is primarily investigated as an emerging material for infrared photonics, nonlinear optical devices, and phase-change memory applications, where its wide transparency window in the mid-to-far infrared region and tunable electronic properties make it attractive compared to conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,483.8 | ksi | — | ||
Exfoliation Energy(Eexf) | 133 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 2,223.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1766 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.840 | eV | — | ||
| ↳ | 1.136 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 19.51 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -263.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03310 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2125 | eV/atom | — | ||
| ↳ | -0.1062 | eV/atom | — |