As₂O₅ is an inorganic oxide semiconductor composed of arsenic and oxygen, belonging to the broader family of metal oxide semiconductors. This material is primarily encountered in research and specialized optoelectronic applications rather than mainstream industrial production, where it has been investigated for its potential in photosensitive devices and infrared detector systems due to its semiconducting properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 10.67 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9000 | eV | — | ||
| ↳ | 0.6140 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 36.84 | - | — | ||
| ↳ | 27.20 range 20.61–33.79median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -268.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1917 | eV/atom | — |