As2 Pd1 O6

semiconductor

· As2 Pd1 O6

As₂Pd₁O₆ is a mixed-valence metal oxide semiconductor containing arsenic and palladium in a crystalline structure. This is an experimental research compound rather than a commercially established material; it belongs to the family of complex metal oxides being investigated for electronic and catalytic applications. Interest in this compound stems from the potential for tunable electronic properties through mixed-valence metal states and its possible use in sensing, catalysis, or energy conversion devices where arsenic–palladium interactions may offer distinct functionality compared to binary oxides.

experimental semiconductor researchgas sensing applicationscatalytic materialselectronic device researchthin-film deposition studiesmaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00330	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9920	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

As2 Pd1 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control