As₂Pb₁O₆ is a mixed-metal oxide semiconductor combining arsenic and lead oxides in a layered perovskite or pyrochlore-related structure. This is primarily a research-phase material studied for its semiconducting and photocatalytic properties; it is not established in mainstream industrial production. The compound belongs to the family of lead-containing oxide semiconductors, which have attracted attention in materials research for potential applications in optoelectronics and environmental remediation, though development is limited by toxicity concerns associated with both arsenic and lead content.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.338 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.347 | eV/atom | — |