As₂I₆ is a semiconductor compound composed of arsenic and iodine, belonging to the family of binary chalcogenide and pnictide semiconductors. This material is primarily of research interest rather than established in high-volume industrial use, with potential applications in optoelectronic devices and radiation detection due to the wide bandgap and high atomic number of its constituent elements. Engineers evaluating As₂I₆ should recognize it as an exploratory material within the broader landscape of III-V and V-VII semiconductors, where it competes with more mature alternatives like CdTe or GaAs for niche applications requiring specific optical or detection properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,020.8 | ksi | — | ||
Shear Modulus(G) | 1,427.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.016 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1960 | eV/atom | — |