As₂Ca₁Ga₂ is a ternary compound semiconductor combining arsenic, calcium, and gallium elements. This is a research-phase material within the III-V semiconductor family, investigated for potential optoelectronic and photovoltaic applications where the calcium dopant or structural role may modify bandgap, carrier mobility, or lattice properties compared to binary GaAs or ternary gallium arsenide compounds. Limited industrial deployment exists; the material remains primarily of academic interest for exploring how alkaline-earth doping influences semiconductor performance in specialized device geometries.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05310 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6820 | eV/atom | — |