As₁Zr₁ is an intermetallic compound combining arsenic and zirconium in a 1:1 stoichiometric ratio, belonging to the semiconductor materials family. This compound is primarily of research interest in solid-state physics and materials science, investigated for potential applications in high-temperature electronics, thermoelectric devices, and advanced semiconductor systems where the unique electronic properties of zirconium-arsenic interactions may offer benefits over conventional semiconductors. The material remains largely experimental, with applications dependent on further development of synthesis methods and characterization of its electrical, thermal, and structural behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02390 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.116 | eV/atom | — |