As1Yb1 is a binary compound semiconductor combining arsenic and ytterbium, representing an experimental intermetallic or rare-earth pnictide material. While not widely commercialized, this material family is of research interest for potential optoelectronic and thermoelectric applications where rare-earth elements can introduce unique electronic properties. Engineers would consider As1Yb1 primarily in exploratory semiconductor device development or as a candidate for high-performance niche applications where conventional III-V or II-VI semiconductors show performance limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,976.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,045 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01470 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9110 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data