As1Yb1 is a binary compound semiconductor combining arsenic and ytterbium, representing an experimental intermetallic or rare-earth pnictide material. While not widely commercialized, this material family is of research interest for potential optoelectronic and thermoelectric applications where rare-earth elements can introduce unique electronic properties. Engineers would consider As1Yb1 primarily in exploratory semiconductor device development or as a candidate for high-performance niche applications where conventional III-V or II-VI semiconductors show performance limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,976.3 | ksi | — | ||
Shear Modulus(G) | 2,045 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01470 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9110 | eV/atom | — |