AS1 Y1 is a semiconductor material designation within the arsenic-yttrium compound family, likely representing a binary or ternary semiconductor with potential applications in optoelectronic and photonic devices. This material sits in the broader category of III-V or mixed-element semiconductors, which are valued for their direct bandgaps and efficient light-emission properties. The specific composition and phase structure of AS1 Y1 suggest research or specialized industrial interest in high-performance electronic applications requiring materials beyond conventional silicon or gallium arsenide platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,525.7 | ksi | — | ||
Shear Modulus(G) | 8,299.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3265 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.644 | eV/atom | — |