AS1 U1 is a semiconductor compound from the arsenic-based III-V material family, likely referring to an arsenide or related compound in research or specialized applications. The designation suggests a specific doping variant or crystalline form developed for niche semiconductor functionality. This material family is explored for high-frequency electronics, optoelectronic devices, and specialized integrated circuits where direct bandgap properties and carrier mobility exceed conventional silicon.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 100.7 | GPa | — | ||
Shear Modulus(G) | 59.72 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01670 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7330 | eV/atom | — |