As₁Sn₁ is an intermetallic compound combining arsenic and tin in a 1:1 stoichiometric ratio, belonging to the semiconductor materials class. This material is primarily of research and experimental interest rather than established industrial production, with potential applications in thermoelectric devices, optoelectronics, and narrow-bandgap semiconductors where the arsenic-tin system offers tunable electronic properties. The As-Sn material family is studied as an alternative semiconductor platform, though commercial adoption remains limited compared to more mature systems like GaAs or silicon-based compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,084.1 | ksi | — | ||
Shear Modulus(G) | 5,694.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00740 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.07100 | eV/atom | — |