As1 In1

semiconductor

· As1 In1

As1In1 is a binary III-V semiconductor compound composed of arsenic and indium in a 1:1 stoichiometric ratio. This material belongs to the III-V semiconductor family and is primarily of research interest for optoelectronic and high-frequency electronic applications, where the direct bandgap and electron transport properties of arsenic-indium compounds offer potential advantages over conventional semiconductors. As1In1 remains largely experimental; the more established InAs and GaAs compounds dominate industrial production, though arsenic-indium phases are investigated for specialized applications requiring specific lattice constants or band-structure engineering.

optoelectronic researchhigh-frequency transistorsnarrow-bandgap semiconductorsquantum well structuresexperimental photovoltaicsIII-V compound device research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	7,256.7	ksi	—
Shear Modulus(G)	3,771	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6457	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2120	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

As1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control