AlZnN3 is an aluminum zinc nitride compound semiconductor, representing an emerging material in the III-V nitride family. While primarily in research and development stages, this material is being investigated for high-frequency electronics and optoelectronic applications where wide bandgap semiconductors offer advantages in thermal stability and breakdown voltage compared to conventional silicon or GaAs devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8000 | eV | — | ||
Magnetic Moment(μB) | 0.0000726 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.660 | eV/atom | — |