AlVON2

semiconductor

· AlVON2

AlVON2 is an aluminum-vanadium-oxygen-nitrogen compound semiconductor, likely a mixed-valence oxide-nitride material still in research or early development stages. This material family is of interest for advanced electronic and optoelectronic applications where the combination of aluminum and vanadium can provide tunable bandgap properties, high thermal stability, or unique catalytic behavior compared to binary oxides or nitrides.

Experimental semiconductor devicesHigh-temperature electronicsPhotocatalytic applicationsThin-film coatingsResearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	0.00144	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlVON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control