Aluminum Nitride (AlN) is a wide-bandgap semiconductor ceramic compound combining aluminum and nitrogen in a 1:1 stoichiometry, belonging to the III-V nitride family alongside GaN and InN. It is primarily used in high-power electronics and optoelectronics where excellent thermal conductivity combined with electrical insulation is critical—such as in LED substrates, power device packaging, and RF/microwave components for telecommunications and defense applications. Engineers select AlN over alternatives like alumina when thermal management of semiconductor junctions is paramount, and over GaN when electrical isolation rather than conductivity is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 308.0 | GPa | — |
2 interactive curves for this material
Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.
Create free account| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 2,473 | K | — | ||
Specific Heat Capacity(Cp) | 740 | J/(kg·K) | — | ||
Thermal Conductivity(k)2 entries | 235 | W/(m·K) | Measured | ||
| ↳ | 285 | W/(m·K) | — | ||
Thermal Conductivity vs Temperature(k(T))2 entries | Curve (21 pts) | W/(m·K) | Measured · single crystal | ||
| ↳ | Curve (6 pts) | W/(m·K) | Measured · sintered ceramic | ||
Coefficient of Thermal Expansion(α (CTE)) | 0.00000450 | 1/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.260 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 5.900 | eV | Measured | ||
| ↳ | 4.474 | eV | DFT · OptB88vdW | ||
| ↳ | 5.197 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.500 | - | — | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 4.445 | - | DFT · OptB88vdW | ||
| ↳ | 3.799 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.3233 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.620 | me | DFT · OptB88vdW · 27°C | ||
Thermoelectric Power Factor(PF)2 entries | 0.000595 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00140 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -90.15 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 312.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.000 | % | DFT · TBmBJ |
2 interactive curves for this material
Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.
Create free account| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Refractive Index vs Wavelength(n(λ))2 entries | Curve (101 pts) | - | Measured · ordinary ray | ||
| ↳ | Curve (101 pts) | - | Measured · extraordinary ray |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.648 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data