Aluminum Nitride (AlN) is a wide-bandgap semiconductor ceramic compound combining aluminum and nitrogen in a 1:1 stoichiometry, belonging to the III-V nitride family alongside GaN and InN. It is primarily used in high-power electronics and optoelectronics where excellent thermal conductivity combined with electrical insulation is critical—such as in LED substrates, power device packaging, and RF/microwave components for telecommunications and defense applications. Engineers select AlN over alternatives like alumina when thermal management of semiconductor junctions is paramount, and over GaN when electrical isolation rather than conductivity is required.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Young's Modulus(E) | 308.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 2,473 | K | — | ||
Specific Heat Capacity(Cp) | 740 | J/(kg·K) | — | ||
Thermal Conductivity(k) | 285 | W/(m·K) | — | ||
Coefficient of Thermal Expansion(α (CTE)) | 0.00000450 | 1/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.260 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 6.200 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.500 | - | — |