AlTlO3 is an experimental oxide semiconductor compound combining aluminum and thallium elements in a perovskite-like crystal structure. While not commercially established, materials in this compound family are investigated for their potential in optoelectronic and photonic applications due to the electronic properties imparted by thallium-containing oxides. Research into such mixed-metal oxides targets niche applications where conventional semiconductors (silicon, gallium arsenide) reach performance or integration limits, though AlTlO3 remains primarily a laboratory material without widespread industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.709 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.6380 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 0.8360 | eV | — | ||
Magnetic Moment(μB)2 entries | -0.0000129 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -85.31 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04730 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.911 | eV/atom | — | ||
| ↳ | 2.280 | eV/atom | — | ||
| ↳ | -1.995 | eV/atom | — |