AlTe is an intermetallic compound composed of aluminum and tellurium, representing a materials research candidate within the metal-semiconductor family. This compound exists primarily as an experimental/developmental material rather than a mature industrial product, with potential applications in thermoelectric devices, optoelectronics, and specialized semiconductor research where aluminum-tellurium interactions offer unique electronic or thermal transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | -1,937.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | -2,612.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1456 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7410 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05210 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3536 | eV/atom | — |