AlTaON2

semiconductor

· AlTaON2

AlTaON2 is an aluminum tantalum oxynitride ceramic compound that combines metallic and ceramic characteristics through nitrogen incorporation into an oxide lattice. This material is primarily of research and development interest for advanced semiconductor and thin-film applications, where the tantalum component provides high refractive index and the oxynitride structure offers tunable electronic properties. It represents the broader family of complex transition metal oxynitrides being investigated for optoelectronics, high-k dielectrics, and photocatalytic devices where conventional oxides or nitrides alone prove insufficient.

thin-film semiconductorshigh-k dielectricsresearch optoelectronicsphotocatalytic coatingsadvanced ceramic compositesexperimental device materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.100	eV	—
Magnetic Moment(μB)	-0.0000250	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlTaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control