AlSnO2N
semiconductor· AlSnO2N
AlSnO₂N is an experimental ternary nitride-oxide semiconductor compound combining aluminum, tin, oxygen, and nitrogen. This material belongs to the broader family of wide-bandgap semiconductors and mixed-anion compounds, which are under active research for next-generation optoelectronic and high-power device applications. The specific composition suggests potential use in transparent conductive oxides (TCOs) or wide-gap semiconductor applications where combined nitride and oxide phases could offer tunable electronic properties distinct from conventional single-phase alternatives.
Research-stage optoelectronicsWide-bandgap semiconductorsTransparent conductive coatingsHigh-power electronics (developmental)UV light emissionAdvanced sensor materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.