AlSnO2N

semiconductor

· AlSnO2N

AlSnO₂N is an experimental ternary nitride-oxide semiconductor compound combining aluminum, tin, oxygen, and nitrogen. This material belongs to the broader family of wide-bandgap semiconductors and mixed-anion compounds, which are under active research for next-generation optoelectronic and high-power device applications. The specific composition suggests potential use in transparent conductive oxides (TCOs) or wide-gap semiconductor applications where combined nitride and oxide phases could offer tunable electronic properties distinct from conventional single-phase alternatives.

Research-stage optoelectronicsWide-bandgap semiconductorsTransparent conductive coatingsHigh-power electronics (developmental)UV light emissionAdvanced sensor materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.7000	eV	—
Magnetic Moment(μB)	-0.00449	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.120	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlSnO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control