AlScO3 is an aluminum scandium oxide compound that functions as a wide-bandgap semiconductor material, belonging to the family of mixed metal oxides with potential optoelectronic and high-temperature applications. This is primarily a research and development material rather than a widely commercialized compound; it is being investigated for advanced semiconductor devices, high-temperature electronics, and potentially as a substrate or buffer layer in heteroepitaxial systems where the combination of aluminum and scandium oxides offers unique crystallographic and electronic properties distinct from conventional single-oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.8000 | eV | — | ||
Magnetic Moment(μB)2 entries | -0.01200 | μB | — | ||
| ↳ | 0.00133 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.867 | eV/atom | — | ||
| ↳ | 1.000 | eV/atom | — |