AlSbN3 is a ternary aluminum antimonide nitride compound, representing an emerging material in the semiconductor and wide-bandgap family. This is a research-stage composition with potential applications in high-temperature electronics and optoelectronics, though industrial deployment remains limited and material processing methods are still being developed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.8368 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.080 | eV/atom | — |