Aluminum antimonide (AlSb) is a III-V compound semiconductor with a zinc-blende crystal structure, formed from aluminum and antimony. It is primarily used in optoelectronic and high-frequency electronic devices where its direct bandgap and carrier mobility characteristics are advantageous. AlSb serves as a substrate material and active layer in infrared detectors, high-electron-mobility transistors (HEMTs), and millimeter-wave components, with particular value in space and defense applications where radiation hardness and thermal stability matter; it is less common than GaAs or InP in mainstream electronics but remains important for specialized infrared imaging and ultra-high-speed RF circuits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 7,136.3 | ksi | DFT | ||
| ↳ | 7,314.3 | ksi | DFT · OptB88vdW | ||
| ↳ | 7,136.3 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.3437 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Poisson's Ratio(ν)2 entries | 0.2600 | - | DFT · OptB88vdW | ||
| ↳ | 0.2496 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 4,290 | ksi | DFT | ||
| ↳ | 4,354 | ksi | DFT · OptB88vdW | ||
| ↳ | 4,290 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 44.72 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1479 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.670 | eV | Measured | ||
| ↳ | 1.322 | eV | DFT · OptB88vdW | ||
| ↳ | 1.777 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.64 | - | DFT · OptB88vdW | ||
| ↳ | 12.45 range 11.80–13.10median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 12.38 | - | DFT · OptB88vdW | ||
| ↳ | 9.879 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.2300 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.5400 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.5411 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.05672 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00639 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00403 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -248.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 256.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 27.76 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.2431 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.2601 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data