Aluminum antimonide (AlSb) is a III-V compound semiconductor with a zinc-blende crystal structure, formed from aluminum and antimony. It is primarily used in optoelectronic and high-frequency electronic devices where its direct bandgap and carrier mobility characteristics are advantageous. AlSb serves as a substrate material and active layer in infrared detectors, high-electron-mobility transistors (HEMTs), and millimeter-wave components, with particular value in space and defense applications where radiation hardness and thermal stability matter; it is less common than GaAs or InP in mainstream electronics but remains important for specialized infrared imaging and ultra-high-speed RF circuits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 49.20 | GPa | — | ||
| ↳ | 49.20 | GPa | — | ||
| ↳ | 50.43 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.3437 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.2496 | - | — | ||
| ↳ | 0.2600 | - | — | ||
Shear Modulus(G)3 entries | 29.58 | GPa | — | ||
| ↳ | 29.58 | GPa | — | ||
| ↳ | 30.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 77.40 | W/(m·K) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.094 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.670 | eV | — | ||
| ↳ | 1.322 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.64 | - | — | ||
| ↳ | 12.45 range 11.80–13.10median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.05672 | C/m² | — | ||
| ↳ | 0.5411 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -248.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2601 | eV/atom | — | ||
| ↳ | -0.2431 | eV/atom | — |