AlSb
semiconductor· AlSb
Aluminum antimonide (AlSb) is a III-V compound semiconductor with a zinc-blende crystal structure, formed from aluminum and antimony. It is primarily used in optoelectronic and high-frequency electronic devices where its direct bandgap and carrier mobility characteristics are advantageous. AlSb serves as a substrate material and active layer in infrared detectors, high-electron-mobility transistors (HEMTs), and millimeter-wave components, with particular value in space and defense applications where radiation hardness and thermal stability matter; it is less common than GaAs or InP in mainstream electronics but remains important for specialized infrared imaging and ultra-high-speed RF circuits.
infrared detectors and focal plane arrayshigh-electron-mobility transistors (HEMTs)millimeter-wave and terahertz devicesspace and radiation-hardened electronicsheterojunction substratesquantum well structures
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 49.20 | GPa | — | ||
| ↳ | 49.20 | GPa | — | ||
| ↳ | 50.43 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.3437 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.2496 | - | — | ||
| ↳ | 0.2600 | - | — | ||
Shear Modulus(G)3 entries | 29.58 | GPa | — | ||
| ↳ | 29.58 | GPa | — | ||
| ↳ | 30.02 | GPa | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 77.40 | W/(m·K) | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.094 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.670 | eV | — | ||
| ↳ | 1.322 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.64 | - | — | ||
| ↳ | 12.45 range 11.80–13.10median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.05672 | C/m² | — | ||
| ↳ | 0.5411 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -248.1 | µV/K | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2601 | eV/atom | — | ||
| ↳ | -0.2431 | eV/atom | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.