Aluminum phosphide (AlP) is a III-V compound semiconductor with a direct bandgap, belonging to the same material family as gallium arsenide and indium phosphide. It is primarily used in optoelectronic and high-frequency electronic devices where its wide bandgap and thermal stability offer advantages over some alternative semiconductors. AlP serves niche applications in ultraviolet light-emitting devices, high-temperature electronics, and as a substrate or buffer layer in heterojunction devices, though it remains less common than GaAs or GaN due to processing challenges and material maturity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 12,353.1 | ksi | DFT | ||
| ↳ | 12,091.8 | ksi | DFT · OptB88vdW | ||
| ↳ | 12,353.1 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.5259 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Exfoliation Energy(Eexf) | 65.32 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.2600 | - | DFT · OptB88vdW | ||
| ↳ | 0.2661 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 6,845.9 | ksi | DFT | ||
| ↳ | 7,254.8 | ksi | DFT · OptB88vdW | ||
| ↳ | 6,845.9 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 48.53 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.08295 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.620 | eV | Measured | ||
| ↳ | 1.794 | eV | DFT · OptB88vdW | ||
| ↳ | 2.563 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.33 | - | DFT · OptB88vdW | ||
| ↳ | 10.52 | - | DFT · PBE | ||
| ↳ | 9.501 range 8.422–10.58median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.613 | - | DFT · OptB88vdW | ||
| ↳ | 6.890 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.3400 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.8400 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.6648 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.000358 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00214 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00383 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -166.3 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 314.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 11.42 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.7517 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.8519 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data