AlP
semiconductor· AlP
Aluminum phosphide (AlP) is a III-V compound semiconductor with a direct bandgap, belonging to the same material family as gallium arsenide and indium phosphide. It is primarily used in optoelectronic and high-frequency electronic devices where its wide bandgap and thermal stability offer advantages over some alternative semiconductors. AlP serves niche applications in ultraviolet light-emitting devices, high-temperature electronics, and as a substrate or buffer layer in heterojunction devices, though it remains less common than GaAs or GaN due to processing challenges and material maturity.
UV light-emitting devicesHigh-temperature electronicsOptoelectronic heterostructuresSemiconductor substratesResearch-phase photonic applications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | — | |
Elastic Anisotropy(AU) | — | - | — | — | |
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν)2 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
Shear Modulus(G)3 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
| ↳ | — | Pa | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | — | W/(m·K) | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)3 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
| ↳ | — median of 2 measurements | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij)2 entries | — | C/m² | — | — | |
| ↳ | — | C/m² | — | — | |
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.