Aluminum phosphide (AlP) is a III-V compound semiconductor with a direct bandgap, belonging to the same material family as gallium arsenide and indium phosphide. It is primarily used in optoelectronic and high-frequency electronic devices where its wide bandgap and thermal stability offer advantages over some alternative semiconductors. AlP serves niche applications in ultraviolet light-emitting devices, high-temperature electronics, and as a substrate or buffer layer in heterojunction devices, though it remains less common than GaAs or GaN due to processing challenges and material maturity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 85.17 | GPa | — | ||
| ↳ | 85.17 | GPa | — | ||
| ↳ | 83.37 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.5259 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Exfoliation Energy(Eexf) | 65.32 | meV/atom | — | ||
Poisson's Ratio(ν)2 entries | 0.2661 | - | — | ||
| ↳ | 0.2600 | - | — | ||
Shear Modulus(G)3 entries | 47.20 | GPa | — | ||
| ↳ | 47.20 | GPa | — | ||
| ↳ | 50.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 84.00 | W/(m·K) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.296 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.620 | eV | — | ||
| ↳ | 1.794 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.52 | - | — | ||
| ↳ | 10.33 | - | — | ||
| ↳ | 9.501 range 8.422–10.58median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.000358 | C/m² | — | ||
| ↳ | 0.6648 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -166.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.8519 | eV/atom | — | ||
| ↳ | -0.7517 | eV/atom | — |