AlNbON2 is an experimental aluminum niobium oxynitride ceramic compound combining elements from refractory metal oxides and nitrides. This is a research-stage material within the broader family of complex ceramic semiconductors, designed to explore enhanced thermal stability, hardness, and electrical properties beyond conventional binary compounds. Industrial deployment remains limited, but the material is of interest for applications requiring extreme temperature performance, wear resistance, or novel semiconductor functionality where conventional Al2O3, AlN, or Nb2O5 prove insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.700 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.0000149 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.7200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data