AlNbON2

semiconductor

· AlNbON2

AlNbON2 is an experimental aluminum niobium oxynitride ceramic compound combining elements from refractory metal oxides and nitrides. This is a research-stage material within the broader family of complex ceramic semiconductors, designed to explore enhanced thermal stability, hardness, and electrical properties beyond conventional binary compounds. Industrial deployment remains limited, but the material is of interest for applications requiring extreme temperature performance, wear resistance, or novel semiconductor functionality where conventional Al2O3, AlN, or Nb2O5 prove insufficient.

high-temperature ceramicsrefractory applicationssemiconductor researchwear-resistant coatingsresearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.700	eV	—
Magnetic Moment(μB)	-0.0000149	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlNbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control