AlNaON2

semiconductor

· AlNaON2

AlNaON2 is an experimental nitride-based semiconductor compound containing aluminum, sodium, oxygen, and nitrogen. This material belongs to the family of mixed-anion semiconductors and is primarily investigated in research contexts for wide-bandgap optoelectronic and electronic device applications. The inclusion of sodium as a dopant or structural component distinguishes it from conventional III-V nitrides (such as GaN), making it a candidate for exploring novel electronic properties, though industrial adoption remains limited pending further development and characterization.

optoelectronic research deviceswide-bandgap semiconductorsexperimental power electronicsUV/visible light emittersnext-generation semiconductor materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.200	eV	—
Magnetic Moment(μB)	1.323e-7	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.160	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlNaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control