AlNaO₃ is an experimental oxide semiconductor compound containing aluminum, sodium, and oxygen, belonging to the broader family of ternary metal oxides under active research for advanced electronic and photonic applications. This material is not yet widely established in commercial production, but represents ongoing investigation into mixed-metal oxides for potential use in transparent conductors, optoelectronic devices, and wide-bandgap semiconductor platforms. Its novelty and composition make it primarily of interest to materials researchers and device engineers exploring alternatives to more conventional oxides like ITO or gallium nitride.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.090 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.466 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.971 | eV/atom | — | ||
| ↳ | 2.660 | eV/atom | — |