Aluminum nitride (AlN) is a wide-bandgap ceramic compound that combines metallic aluminum with nitrogen, forming a hexagonal crystal structure with exceptional thermal and electrical properties. It is widely used in high-power electronics, optoelectronics, and thermal management applications where efficient heat dissipation and electrical isolation are critical—particularly in RF power amplifiers, LED substrates, and integrated circuit packaging. Engineers select AlN over alternatives like alumina or silicon carbide when superior thermal conductivity paired with electrical insulation is needed in space-constrained or high-frequency applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 28,196.1 | ksi | DFT | ||
| ↳ | 31,019.2 | ksi | DFT · OptB88vdW | ||
| ↳ | 28,196.1 | ksi | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.03437 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | DFT · PBE | ||
Exfoliation Energy(Eexf) | 499.2 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.2500 | - | DFT · OptB88vdW | ||
| ↳ | 0.2413 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 17,626.6 | ksi | DFT | ||
| ↳ | 19,690.3 | ksi | DFT · OptB88vdW | ||
| ↳ | 17,626.6 | ksi | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 135.8 | BTU/(hr·ft·°F) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1236 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 5.900 | eV | Measured | ||
| ↳ | 4.474 | eV | DFT · OptB88vdW | ||
| ↳ | 5.197 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 78.96 | - | DFT · OptB88vdW | ||
| ↳ | 11.26 range 5.103–17.43median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 4.445 | - | DFT · OptB88vdW | ||
| ↳ | 3.799 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.3233 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.620 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.000 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.2859 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000595 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00140 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -90.15 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 312.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 0.000 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1269 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -1.523 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.648 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data