AlLaN3 is an aluminum-based ternary nitride compound combining aluminum, lanthanum, and nitrogen—a research-phase material being explored for advanced ceramic and semiconductor applications. This material family is of interest in high-temperature structural ceramics and wide-bandgap semiconductor research, where the rare-earth lanthanum addition is expected to modify thermal stability, mechanical properties, or electronic characteristics compared to simpler binary nitrides. Engineers and researchers would consider AlLaN3 primarily in exploratory development contexts where enhanced high-temperature performance or novel electronic properties are targets, rather than as an established production material.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.209 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.740 | eV/atom | — |