AlInO3
semiconductorAlInO3 is a ternary oxide semiconductor compound composed of aluminum, indium, and oxygen, belonging to the family of mixed-metal oxides with potential applications in advanced electronics and optoelectronics. This material is primarily of research and development interest rather than established commercial production, investigated for its potential in high-temperature semiconducting devices, wide-bandgap electronics, and transparent conductive oxide applications where the combined properties of Al and In oxides may offer advantages over single-component alternatives. Engineers would consider AlInO3 for next-generation power electronics, UV detection systems, or specialized optoelectronic devices requiring thermal stability and wide bandgap characteristics, though material availability and manufacturing processes are still being optimized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Magnetic Moment(μB)2 entries | — | μB | — | — | |
| ↳ | — | µB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)3 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |