AlInO3 is a ternary oxide semiconductor compound composed of aluminum, indium, and oxygen, belonging to the family of mixed-metal oxides with potential applications in advanced electronics and optoelectronics. This material is primarily of research and development interest rather than established commercial production, investigated for its potential in high-temperature semiconducting devices, wide-bandgap electronics, and transparent conductive oxide applications where the combined properties of Al and In oxides may offer advantages over single-component alternatives. Engineers would consider AlInO3 for next-generation power electronics, UV detection systems, or specialized optoelectronic devices requiring thermal stability and wide bandgap characteristics, though material availability and manufacturing processes are still being optimized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 191.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 93.16 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.641 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.524 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 2.464 | eV | — | ||
Magnetic Moment(μB)2 entries | -0.09590 | μB | — | ||
| ↳ | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02050 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.354 | eV/atom | — | ||
| ↳ | 1.140 | eV/atom | — | ||
| ↳ | -2.488 | eV/atom | — |