AlInO2N

ceramic

· AlInO2N

AlInO₂N is an experimental oxynitride ceramic compound combining aluminum, indium, oxygen, and nitrogen phases. This material belongs to the ternary/quaternary ceramic family and is primarily of research interest for advanced applications requiring thermal stability and electronic functionality. Industrial adoption remains limited, but the material shows potential in optoelectronic devices, high-temperature structural applications, and wide-bandgap semiconductor contexts where the unique combination of metal cations and mixed anion chemistry offers tailored properties versus conventional oxides or nitrides alone.

Wide-bandgap semiconductorsHigh-temperature ceramicsOptoelectronic devicesThermal barrier coatingsResearch/developmental applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.006	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental