AlInN2

metal
· JVASP-100858· AlInN2

AlInN (aluminum indium nitride) is a wide-bandgap III-nitride semiconductor alloy that combines aluminum and indium nitrides, primarily studied for high-frequency and high-power electronic applications. This material system is notable for its tunable bandgap—by adjusting the aluminum-to-indium ratio—making it valuable for next-generation RF devices, power electronics, and optoelectronic components where performance beyond conventional GaN or AlGaN is required. AlInN is largely in advanced research and early commercialization stages, with significant potential for millimeter-wave communications, extreme-environment sensors, and efficient power conversion where thermal stability and carrier mobility advantages can be leveraged.

RF and microwave semiconductorsHigh-power electronic devicesMillimeter-wave communicationsHigh-temperature sensorsOptoelectronic and photonic componentsNext-generation power converters

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
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Verified Unverified Low confidence (<80%) Link to source
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Band Gap(Eg)
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Magnetic Moment(μB)
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Verified Unverified Low confidence (<80%) Link to source
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Energy Above Hull(ΔEhull)
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Formation Energy(ΔHf)
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Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.