AlInAg₂Se₄ is an experimental quaternary semiconductor compound combining aluminum, indium, silver, and selenium elements. This material belongs to the family of complex chalcogenides and is primarily of research interest for optoelectronic and photovoltaic applications where tunable bandgap and compound semiconductor properties are desirable. The material's multi-element composition offers potential for engineering electronic properties beyond what binary or ternary semiconductors provide, though industrial adoption remains limited to specialized research contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,589.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.3800 | - | — | ||
Shear Modulus(G) | 2,172.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1893 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4990 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00150 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5140 | eV/atom | — |