AlIn2N3

metal
· JVASP-111849· AlIn2N3

AlIn2N3 is a ternary nitride ceramic compound combining aluminum, indium, and nitrogen, belonging to the III-V nitride family of wide-bandgap semiconductors. This material is primarily of research interest for advanced optoelectronic and high-temperature electronic applications, where its nitride structure offers potential for high thermal stability and electronic performance. Engineers consider AlIn2N3 as an emerging alternative within the AlInN system for specialized device applications requiring tunable bandgap properties or lattice-matched heterostructures in GaN-based technology platforms.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature electronicsGaN heterostructuresresearch/development materialsRF and power device platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
ksi
Poisson's Ratio(ν)
-
Shear Modulus(G)
ksi
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
lb/in³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Magnetic Moment(μB)
µB
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
AlIn2N3 — Properties & Data | MatWorld