AlIn2N3 is a ternary nitride ceramic compound combining aluminum, indium, and nitrogen, belonging to the III-V nitride family of wide-bandgap semiconductors. This material is primarily of research interest for advanced optoelectronic and high-temperature electronic applications, where its nitride structure offers potential for high thermal stability and electronic performance. Engineers consider AlIn2N3 as an emerging alternative within the AlInN system for specialized device applications requiring tunable bandgap properties or lattice-matched heterostructures in GaN-based technology platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 149.0 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 73.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.936 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.087 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02370 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5331 | eV/atom | — |