AlHfO2F

semiconductor

· AlHfO2F

AlHfO2F is an experimental mixed-metal oxide fluoride ceramic compound combining aluminum, hafnium, oxygen, and fluorine—a composition designed to explore enhanced dielectric and thermal properties at the intersection of high-κ oxide ceramics and fluoride-doped systems. This research-phase material is being investigated for advanced gate dielectrics and high-temperature insulation applications where conventional oxides reach performance limits, with potential advantages in thermal stability and interfacial control compared to standard Al₂O₃ or HfO₂ alone.

advanced gate dielectricshigh-temperature insulationresearch semiconductorsnext-generation microelectronicsthin-film capacitors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.500	eV	—
Magnetic Moment(μB)	1.506e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlHfO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control