AlGaO₂ is an aluminum gallium oxide ceramic compound that belongs to the mixed-metal oxide family, combining aluminum and gallium oxides into a single crystalline phase. This material is primarily of research and development interest rather than established in high-volume industrial production, with potential applications in advanced optoelectronics and high-temperature semiconducting devices where the combination of aluminum and gallium oxides may offer tunable properties. Engineers would consider AlGaO₂ for next-generation applications requiring wide bandgap semiconductors or transparent conducting oxides, particularly in emerging fields where the specific phase composition provides advantages over conventional single-oxide alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,051.2 | ksi | — | ||
Poisson's Ratio(ν) | 0.3600 | - | — | ||
Shear Modulus(G) | 5,211.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1552 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.8480 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.640 | eV/atom | — |