AlGaO₂ is an aluminum gallium oxide ceramic compound that belongs to the mixed-metal oxide family, combining aluminum and gallium oxides into a single crystalline phase. This material is primarily of research and development interest rather than established in high-volume industrial production, with potential applications in advanced optoelectronics and high-temperature semiconducting devices where the combination of aluminum and gallium oxides may offer tunable properties. Engineers would consider AlGaO₂ for next-generation applications requiring wide bandgap semiconductors or transparent conducting oxides, particularly in emerging fields where the specific phase composition provides advantages over conventional single-oxide alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 83.09 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 35.93 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.297 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.8480 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.640 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data