AlGaN3

metal

· AlGaN3

AlGaN3 is a wide-bandgap semiconductor compound in the aluminum gallium nitride (AlGaN) material family, designed for high-performance optoelectronic and power electronic applications. This composition sits within the AlₓGa₁₋ₓN system and is primarily of research and specialized industrial interest for UV emitters, high-electron-mobility transistors (HEMTs), and high-voltage power devices where its wide bandgap enables superior thermal stability and breakdown voltage compared to conventional silicon or GaAs alternatives.

UV light emitters and detectorsHigh-electron-mobility transistors (HEMTs)High-voltage power switchingRF amplifiersSpace and defense electronicsNext-generation semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.359	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.580	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control