AlGaN (aluminum gallium nitride) is a wide-bandgap semiconductor compound belonging to the III-nitride material family, created by alloying aluminum and gallium nitrides. It is primarily used in optoelectronic and high-power electronic devices where its wide bandgap enables operation at higher temperatures, voltages, and frequencies than conventional semiconductors. Notable applications include UV light-emitting diodes (UVLEDs), high-electron-mobility transistors (HEMTs) for RF power amplification, and deep-ultraviolet photodetectors, making it essential for aerospace communications, industrial sterilization, and emerging 5G/6G infrastructure.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 27,359.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 16,820 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1680 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.776 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 9.393 | - | — | ||
| ↳ | 7.254 range 5.189–9.319median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.8423 | C/m² | — | ||
Seebeck Coefficient(S) | -80.01 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00110 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.112 | eV/atom | — |