AlGa3 is an intermetallic compound in the aluminum-gallium system, representing a distinct phase in this binary metal system. This material is primarily of research and specialized industrial interest, used in semiconductor device applications, optoelectronic components, and studies of intermetallic strengthening mechanisms. Engineers consider AlGa3 for applications requiring specific electronic or thermal properties at the intersection of aluminum and gallium metallurgy, though it remains less common than gallium arsenide (GaAs) or other III-V semiconductors in mainstream production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,703.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.4600 | - | — | ||
Shear Modulus(G) | 593.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1907 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05560 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.04311 | eV/atom | — |