AlCdN3 is an experimental ternary nitride semiconductor compound combining aluminum, cadmium, and nitrogen elements. This material belongs to the wider family of III-V and mixed-metal nitride semiconductors under active research for optoelectronic and high-frequency device applications. While not yet commercialized at scale, AlCdN3 and related cadmium-containing nitrides are investigated for their potential to engineer bandgap properties and lattice parameters beyond what binary nitrides (like GaN or AlN) can achieve, though cadmium toxicity and processing complexity present significant practical challenges compared to cadmium-free alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6000 | eV | — | ||
Magnetic Moment(μB) | -0.000102 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.780 | eV/atom | — |