AlBiO₃ is an experimental bismuth-containing oxide semiconductor compound that combines aluminum and bismuth oxides into a perovskite or related crystal structure. This material remains primarily in research and development stages, studied for potential applications in optoelectronic devices, photocatalysis, and solid-state electronics where bismuth incorporation can modify band gap characteristics and enhance visible-light absorption compared to conventional aluminum oxides. Engineers and researchers investigate AlBiO₃ as a candidate material for next-generation semiconducting oxides where tunable electronic properties and chemical stability are advantageous, though commercial-scale synthesis, reproducibility, and long-term performance data remain limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 106.8 | GPa | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 55.04 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.980 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.156 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB)2 entries | -0.000120 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 4.119 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | 20.69 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.713 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.132 | eV/atom | — | ||
| ↳ | 1.480 | eV/atom | — | ||
| ↳ | -0.6400 | eV/atom | — |