AlBiN₃ is an experimental ternary nitride compound combining aluminum, bismuth, and nitrogen elements, representing an emerging materials system in the nitride family. This material is primarily of research interest for semiconductor and optoelectronic applications, where bismuth-containing nitrides are being investigated for their potential to modify bandgap properties and enable new device functionality compared to conventional III-N systems like GaN and AlN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.187 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.940 | eV/atom | — |